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| SK60GB123 Absolute Maximum Ratings Symbol Conditions IGBT Values Units SEMITOP(R) 3 IGBT Module SK60GB123 Module Preliminary Data Inverse Diode Features Characteristics Symbol Conditions IGBT min. typ. max. Units Typical Applications GB 1 13-02-2007 DIL (c) by SEMIKRON SK60GB123 Characteristics Symbol Conditions Inverse Diode min. typ. max. Units SEMITOP(R) 3 IGBT Module SK60GB123 This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. Preliminary Data Features Typical Applications GB 2 13-02-2007 DIL (c) by SEMIKRON SK60GB123 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 6 Typ. gate charge characteristic 3 13-02-2007 DIL (c) by SEMIKRON SK60GB123 Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 10 CAL diode forward characteristic 4 13-02-2007 DIL (c) by SEMIKRON SK60GB123 UL recognized file no. E 63 532 5 13-02-2007 DIL (c) by SEMIKRON |
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